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Home / Archives / Volume-6 / Issue-1 / Article-6

Volume - 6 | Issue - 1 | march 2024

Gate Electrode Work Function Engineered Nanowire FET with High Performance and Improved Process Sensitivity Open Access
Mandeep Singh Narula  , Archana Pandey, Ajay Kumar  103
Pages: 66-76
Cite this article
Narula, Mandeep Singh, Archana Pandey, and Ajay Kumar. "Gate Electrode Work Function Engineered Nanowire FET with High Performance and Improved Process Sensitivity." Journal of Electronics and Informatics 6, no. 1 (2024): 66-76
Published
30 April, 2024
Abstract

MOSFETs have been used in integrated circuits for a long time. These were replaced by FinFET’s in 2011. But for short-channel devices, FinFET’s have low performance due to various effects like velocity saturation, hot carrier effect, drain-induced barrier lowering, channel length modulation, fringing field effect, sub-threshold conduction, threshold voltage roll-off, etc. Gate All Around FET (GAA FET) is the best device that will replace the FinFET’s. Therefore, during the fabrication process, it is crucial to investigate the effects of process variations caused by changes in device dimensions. This research discusses the performance of the proposed device due to process variations. The effect of changes in radius, gate oxide thickness, gate length, and channel doping on GAA FET has been discussed in detail.

Keywords

FinFET Gate All Around Process Variation Scaling Drive Current

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