KAUNDAL, Shalu. Analysis of 10 nm Strained Channel Double Gate Ultra-Thin Body Junctionless MOSFET. Journal of Electronics and Informatics, [S. l.], v. 6, n. 3, p. 262–269, 2024. DOI: 10.36548/jei.2024.3.005. Disponível em: https://irojournals.com/iroei/article/view/559. Acesso em: 21 mar. 2026.