Abstract
As the level of integration of IC increases, System on Chip (SoC) design has evolved. This technology comprises of several intellectual property blocks on a single chip. With downsizing of transistors, the traditional elements used impose several challenges such as power dissipation, leakage and so on. These factors risk the cost efficiency of microsystems and risk the semiconductor industry's capability to prolong Moore's law in the nanometer range. This is overcome by the introduction of carbon materials such as nanosheet FET. They are advantageous over the traditional elements in terms of area and power efficiency. We design an energy and power efficient SoC with nanosheet FET that provides noise tolerance and memory optimization.
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