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Home / Archives / Volume-7 / Issue-2 / Article-4

Volume - 7 | Issue - 2 | june 2025

Design and Implementation of CMOS K-Band Phase Shifter using 90nm Open Access
Sumathi M.  , Kanneboina Venu Prasad , Velugubanti Phanindra  172
Pages: 138-150
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Cite this article
M., Sumathi, Kanneboina Venu Prasad, and Velugubanti Phanindra. "Design and Implementation of CMOS K-Band Phase Shifter using 90nm." Journal of Electrical Engineering and Automation 7, no. 2 (2025): 138-150
Published
08 July, 2025
Abstract

We suggested designing a 24 GHz K band CMOS phase shifter using 90nm technology in this paper to satisfy the need for integrated and high-performance components for wireless system development. For the best phase shift and the least amount of insertion loss, the phase shifter operates between 18 and 27 GHz using a combination of lumped and distributed components. Important considerations are phase selectivity, linearity, and impedance matching. Theory and experiments demonstrate that it has a 180° range of phase shift and is utilized in high-frequency applications. The study demonstrates how 90nm CMOS technology can be used to improve wireless communication.

Keywords

Complementary Metal Oxide Semiconductor (CMOS) Radio Frequency Design Root Mean Square (RMS) Gain Error RMS Phase Error Phase Shifter

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